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TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number or Voltage
Test # [V]
61 IXGQ90N30TCD1 SK0631 16
62 IXGQ90N33TB SK0651 16
63 IXGQ90N33TC SK0649 16
64 IXGQ90N33TCD1 SK0639 16
65 IXGQ90N33TCD1 SK0728 16
66 IXGQ90N33TCD4 SK0721 16
67 IXGR120N60C2 SP0722 16
68 IXGR40N60C2D1 SP0635 16
69 IXGR48N60C3D1 SP0722 16
70 IXGX72N60B3H1 SP0739 16
71 IXKH70N60C5 1926 16
72 IXKP13N60C5M 1716 16
73 IXSH30N60B2D1 SP0506 16
74 IXSK40N60CD1 SK0722 16
75 IXTA36N30P SK0603 16
76 IXTA36N30P K0621 16
77 IXTA36N30P K640 16
78 IXTA50N25T SK0604 16
79 IXTA50N28T K545 16
80 IXTA50N28T K0606 16
81 IXTA50N28T K634 16
82 IXTA50N28T K640 16
83 IXTA60N20T SK0601 16
84 IXTA76N25T K0704 16
85 IXTC110N25T SP0721 16
86 IXTC200N075T SP0627 16
87 IXTH130N20T SP0721 16
88 IXTH150N17T SK0718 16
89 IXTH160N15T SK0721 16
90 IXTH1N250 TP0638 16
91 IXTH30N50L TK0738 16
92 IXTH76N25T SP0613 16
93 IXTH86N25T SP0638 16
94 IXTH8P50 SK0712 16
95 IXTK180N15P SP0552 16
96 IXTN79N20 2052 16
97 IXTP08N100P K625 16
98 IXTP08N120P K0709 16
99 IXTP14N60PM K631 16
100 IXTP14N60PM K643 16
101 IXTP160N075T K0707 16
102 IXTP17N30T K648 16
103 IXTP18N60PM K631 16
104 IXTP1R4N120P K638 16
105 IXTP2R4N120P K636 16
106 IXTP32N20T K647 16
107 IXTP36N15T K648 16
108 IXTP36N25T K636 16
109 IXTP36N30T K641 16
110 IXTP44N25T K636 16
111 IXTP50N25T K738 16
112 IXTP56N15T K636 16
113 IXTP62N25T K648 16
114 IXTP74N15T K636 16
115 IXTP76N075T K640 16
116 IXTP76N075T K726 16
117 IXTP76N075T SS0728 16
118 IXTP8N50P K646 16
119 IXTP8N50P AK732 16
120 IXTP90N15T K647 16
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
20
30
30
30
30
30
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
20000
30000
30000
30000
30000
30000
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
IXYS Semiconductor GmbH
12
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相关代理商/技术参数
IXTQ30N50L
功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50L2
功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50P
功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60L2
功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60P
功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N20T
功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N30P
功能描述:MOSFET 36 Amps 300V 0.11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N50P
功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube